Electronic element including ferroelectric substance film...

Details Electronic element including ferroelectric substance film... Electronic element including ferroelectric substance film...

2008-05-12

2010-12-28

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S076000, C257S094000, C257S183000, C257S184000, C117S084000, C117S106000, C428S446000, C428S450000, C428S701000, C428S702000

Reexamination Certificate

active

07858959

ABSTRACT:
A laminated film structure, method of manufacturing, and a preferable electronic element using the structure. The effective polarization into the electric field can be realized in the direction of crystal axis by enhancing the crystal property and alignment property of the ferroelectric substance film formed through epitaxial growth with reference to the plane alignment of semiconductor substrate. After the yttrium stabilized zirconium film and a film of the rock salt structure are sequentially formed with epitaxial growth on a semiconductor substrate, the ferroelectric substance film of simple Perovskite structure is also formed with epitaxial growth. The ferroelectric substance film can improve the crystal property and alignment property thereof by rotating the plane for 45 degrees within the plane for the crystal axis of the yttrium stabilized zirconium.

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S. Matsubara et al.,Preparation of epitaxial ABO3perovskite-type oxide thin films on a(100)MgAl2O4/ Si substrate, J. Appl. Phys., vol. 66, No. 12, Dec. 15, 1989, pp. 5826-5832.

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