Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1997-04-29
1998-08-25
Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257200, 257201, 257280, H01L 2900
Patent
active
057985405
ABSTRACT:
An electronic device characterized by a GaAs substrate and a base disposed n the substrate, the base comprising InAs channel layer, AlSb layer above the channel layer, In.sub.x Al.sub.1-x As.sub.y Sb.sub.1-y layer containing at least In, Al, and As disposed above the AlSb channel layer, InAs cap layer disposed above and in contact with the In.sub.x Al.sub.1-x As.sub.y Sb.sub.1-y layer disposed below the InAs channel layer and in contact with the substrate, p.sup.+ GaSb layer disposed within the AlSb layer, Schottky gate with a pad disposed on and in contact with the In.sub.x Al.sub.1-x As.sub.y Sb.sub.1-y layer, at least one ohmic contact disposed on the InAs cap layer, and a trench extending through the base to the substrate isolating the gate bonding pad from the device and providing a gate air bridge which prevents contact between the gate and the InAs layer. The gate air bridge fabrication is accomplished by a liquid etchant containing more than half, on volume basis, of concentrated lactic acid or acetic acid with remainder hydrogen peroxide and concentrated hydrofluoric acid. The etchant attacks InAs, In.sub.x Al.sub.1-x As.sub.y Sb.sub.1-y, AlSb, and GaSb but does not attack GaAs and Au-based alloys.
REFERENCES:
patent: 4695857 (1987-09-01), Baba et al.
patent: 5364816 (1994-11-01), Boos et al.
patent: 5453627 (1995-09-01), Aihara et al.
Bennett Brian R.
Boos John Bradley
Kruppa Walter
Park Doewon
Kap George
McDonnell Thomas
The United States of America as represented by the Secretary of
Wallace Valencia
LandOfFree
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