Electronic devices with fullerene layers

Details Electronic devices with fullerene layers Electronic devices with fullerene layers

2005-11-01

2005-11-01

Munson, Gene M. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S485000, C257S613000, C257S657000, C977S726000

Reexamination Certificate

active

06960782

ABSTRACT:
Described is an electronic device comprising a junction formed between a first fullerene layer having a first doping concentration and a second fullerene layer having a second doping concentration different from the first doping concentration. The first doping concentration may be zero. The first and/or the second fullerene layer may be a monolayer. The second fullerene layer may comprise an electron donor. One example of such a device is a diode wherein the first fullerene layer is connected to an anode and the second fullerene layer is connected to a cathode. Another example is a field effect transistor wherein the first fullerene layer serves as a gate region and the second fullerene layer serves as a channel region. The second fullerene layer may alternatively comprise an electron acceptor. At least one of the first and second fullerene layers may be formed from C60, or may consist of a single bucky ball.

REFERENCES:
patent: 5171373 (1992-12-01), Hebard et al.
patent: 5331183 (1994-07-01), Sariciftci et al.
patent: 5391323 (1995-02-01), Haddon et al.
patent: 5454880 (1995-10-01), Sariciftci et al.
patent: 5637260 (1997-06-01), Okuda et al.
patent: 6750471 (2004-06-01), Bethune et al.

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