Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2007-08-07
2011-12-06
Yamnitzky, Marie R. (Department: 1786)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S431000, C257SE51050, C313S506000, C428S917000, C136S263000
Reexamination Certificate
active
08071975
ABSTRACT:
The present invention is directed to a photoactive device comprising an anode, a cathode, and a photoactive layer, which device further comprises an electron transport and/or anti-quenching layer which minimizes both electron transfer quenching and energy transfer quenching of the photoactive layer.
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Patent Abstracts of Japan, Novel Heterocyclic Compound, Light-Emitting, Element Material and Light-Emitting Element Us
LeCloux Daniel D.
Wang Ying
E. I. du Pont de Nemours and Company
Yamnitzky Marie R.
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