Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2007-07-31
2007-07-31
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S080000, C257S088000, C257SE33001
Reexamination Certificate
active
11088164
ABSTRACT:
An electronic device includes a radiation-emitting component, a radiation-responsive component, or a combination thereof. In one embodiment, the electronic device includes a substrate and a first structure overlying the substrate. The electronic device also includes a second structure that includes a first layer, wherein the first layer has a first refractive index, and the first layer includes a first edge. The electronic device further includes a second layer overlying at least portions of the first structure and the second structure at the first edge. The second layer has a second refractive index that is lower than the first refractive index. In another embodiment, the first structure includes a layer having a perimeter and a pattern lying within the perimeter. The pattern extends at least partly though the first layer to define an opening with a first edge. In another embodiment, a process is used to form the electronic device.
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Hahn Patrick
Hubert Matthew Dewey
Stevenson Matthew
Uckert Frank P.
Yu Gang
DuPont Displays, Inc.
E. I. du Pont de Nemours and Company
Lamming John H.
Quach T. N.
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