Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-03-07
2006-03-07
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S094000, C257S096000, C257S097000, C257S098000, C257S101000, C257S102000, C257S103000
Reexamination Certificate
active
07009199
ABSTRACT:
A light engine comprises a pair of LED active elements mounted on a common header having first and second terminals. The first terminal is connected to the cathode of the first LED active element and the anode of the second LED active element, while the second terminal is connected to the anode of the first LED active element and the cathode of the second LED active element, thereby connecting the LEDs in an anti-parallel arrangement. A light engine having a single insulating or semi-insulating substrate having formed thereon plural LED active elements with associated p- and n-type contacts forming cathode and anode contacts, respectively, for each LED active element is also provided. The LED active elements may be mounted in a flip-chip configuration on a header having a plurality of leads. The header may include a pair of leads adapted such that two LEDs may be flip-mounted thereon with the anode of the first LED and the cathode of the second LED contacting one lead, while the cathode of the first LED and the anode of the second LED contact the other lead. In addition, the header may be adapted to permit a substrate having multiple active elements to be mounted thereon.
REFERENCES:
patent: 4918497 (1990-04-01), Edmond
patent: 4966862 (1990-10-01), Edmond
patent: 5006908 (1991-04-01), Matsuoka et al.
patent: 5027168 (1991-06-01), Edmond
patent: 5187377 (1993-02-01), Katoh
patent: 5210051 (1993-05-01), Carter, Jr.
patent: 5338994 (1994-08-01), Lezan et al.
patent: 5393993 (1995-02-01), Edmond et al.
patent: 5416342 (1995-05-01), Edmond et al.
patent: 5523589 (1996-06-01), Edmond et al.
patent: 5604135 (1997-02-01), Edmond et al.
patent: 5631190 (1997-05-01), Negley
patent: 5739554 (1998-04-01), Edmond et al.
patent: 5912447 (1999-06-01), Bjorner et al.
patent: 5936599 (1999-08-01), Reymond
patent: 5982345 (1999-11-01), Takayama et al.
patent: 5998925 (1999-12-01), Shimizu et al.
patent: 6013199 (2000-01-01), McFarland et al.
patent: 6066681 (2000-05-01), Kaplan et al.
patent: 6084250 (2000-07-01), Jüstel
patent: 6120600 (2000-09-01), Edmond et al.
patent: 6132072 (2000-10-01), Turnbull et al.
patent: 6187606 (2001-02-01), Edmond et al.
patent: 6201262 (2001-03-01), Edmond et al.
patent: 6388393 (2002-05-01), Illingworth
patent: 6414662 (2002-07-01), Havel
patent: 6498355 (2002-12-01), Harrah et al.
patent: 6547249 (2003-04-01), Collins et al.
patent: 6635503 (2003-10-01), Andrews et al.
patent: 6636027 (2003-10-01), Nerone
patent: 6740906 (2004-05-01), Slater, Jr. et al.
patent: 6747298 (2004-06-01), Slater, Jr. et al.
patent: 2001/0032985 (2001-10-01), Bhat et al.
patent: 2002/0030444 (2002-03-01), Muller-Mach et al.
patent: 2002/0070681 (2002-06-01), Shimizu et al.
patent: 2002/0123164 (2002-09-01), Slater, Jr. et al.
patent: 2002/0139987 (2002-10-01), Collins, III et al.
patent: 2003/0006418 (2003-01-01), Emerson et al.
patent: 2003/0045015 (2003-03-01), Slater, Jr. et al.
patent: 2003/0089918 (2003-05-01), Hiller et al.
patent: 2004/0029491 (2004-02-01), Hubbell, III
patent: 2004/0056260 (2004-03-01), Slater, Jr. et al.
patent: 1020935 (2000-07-01), None
patent: 55148477 (1980-11-01), None
patent: 57-167690 (1982-10-01), None
patent: 08172219 (1996-11-01), None
patent: 11-016683 (1999-01-01), None
patent: WO 01/69978 (2001-09-01), None
“A Comparative Study of GaN Epilayers Grown on Sapphire and SiC Substrates □□by Plasma-Assisted Molecular-Beam Epitaxy”, by M.E. Lin et al., Applied □□Physics Letters, vol. 62 (26), Jun. 28, 1993, pp. 3479-3481.
“A Comparative Study of GaN Epilayers Grown on Sapphire and SiC Substrates □□by Plasma-Assisted Molecular-Beam Epitaxy”, by M.E. Lin et al., Applied □□Physics Letters, vol. 62 (26), Jun. 28, 1993, pp. 3479-3481.
Light Emitting Diodes(LEDs)for General Illumination II: An OIDA Roadmap. Optoelectronics Industry Development Association, Jul. 26, 2002, pp. 1-105.
Emerson, David, Provisional U.S. Appl. No. 60/294,308, filed May 30, 2001.
Emerson, David, Provisional U.S. Appl. No. 60/294,378, filed May 30, 2001.
Emerson, David, Provisional U.S. Appl. No. 60/294,445, filed May 30, 2001.
Hiller et al., Provisional U.S. Appl. No. 60/335,349, filed Oct. 31, 2001.
Glass et al., Provisional U.S. Appl. No. 60/307,235, filed Jul. 23, 2002.
Hubbell, Edward, Provisional U.S. Appl. No. 60/398,753, filed Jul. 26, 2002.
Slater et al., Provisional U.S. Appl. No. 60/411,980, filed Sep. 19, 2002.
International Search Report dated Aug. 18, 2004 or corresponding PCT application No. PCT/US03/31335.
Cree Inc.
Dickey Thomas L.
Myers Bigel & Sibley & Sajovec
Tran Minhloan
LandOfFree
Electronic devices having a header and antiparallel... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electronic devices having a header and antiparallel..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electronic devices having a header and antiparallel... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3603675