Stock material or miscellaneous articles – Composite – Of inorganic material
Reexamination Certificate
1999-07-15
2001-07-24
Jones, Deborah (Department: 1775)
Stock material or miscellaneous articles
Composite
Of inorganic material
C428S689000, C428S697000, C428S700000, C257S103000, C257S201000, C257S627000, C257S628000, C438S478000
Reexamination Certificate
active
06265089
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention pertains to an electronic device characterized by a semiconductor film disposed on a growth surface of a sapphire substrate wherein the growth surface is off a-axis.
2. Description of the Related Art
The growth of high quality semiconducting films of III/V elements of the Periodic Table on a sapphire substrate has been a topic of major interest in recent years. Attempts have been made to improve the material quality of the films by optimizing essential growth parameters such as temperature, buffer layer, and the chemical composition of the film constituents. However, the role of the vicinal angle, while recognized in some materials such as gallium arsenide on silicon, has remained unexplored in the case of the semiconducting films on sapphire substrates. It is known that growth of a film on basal plane (0001) or the c-plane of sapphire substrates through off c-plane angles of up to 10° have shown to be of little help in improving the overall quality of the film.
OBJECTS AND BRIEF SUMMARY OF THE INVENTION
An object of this invention is an electronic device wherein a semiconducting film is disposed vicinally on a-plane of a sapphire substrate which device has improved electrical and crystalline properties.
Another object of this invention is to enhance the reliability of an electronic device grown on a sapphire substrate.
Another object of this invention is an electronic device, on a sapphire substrate. that has improved electrical properties and more uniform properties when measured from center to edge of the electronic device.
These and other objects of this invention are achieved by an electronic device wherein a semiconducting film is arranged on a vicinally disposed a-plane substrate.
REFERENCES:
patent: 4908074 (1990-03-01), Hosoi et al.
patent: 5587593 (1996-12-01), Koide et al.
Fatemi Mohammad
Henry Richard
Koleske Daniel D.
Twigg Mark
Wickenden Alma E.
Bahta Abraham
Jones Deborah
Kapp George A.
Karasek John J.
The United States of America as represented by the Secretary of
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