Electronic devices formed of high-purity molybdenum oxide

Details Electronic devices formed of high-purity molybdenum oxide Electronic devices formed of high-purity molybdenum oxide

2007-07-31

2007-07-31

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

C257S110000, C257SE29150

Reexamination Certificate

active

10863288

ABSTRACT:
The present invention is directed to electronic devices comprising high-purity molybdenum oxide in at least a part of the devices. The devices according to the present such a bipolar transistor, a field effect transistor and a thyristor have a high withstand voltage. The present invention is directed also hostile-environment electron devices formed using high-purity molybdenum oxide. The devices according the present invention can be fabricated at a relatively lower temperature such as 700° C. than that at which GaN or SiC devices are fabricated, the at is a temperature higher than 1000° C.

REFERENCES:
patent: 6627959 (2003-09-01), Tuller et al.
patent: 2005/0156197 (2005-07-01), Tsutsui et al.
patent: 2002-217425 (2006-08-01), None
Pettus, C., “A Molybdenum-Oxide Negative-Resistance Device”, Jan. 1965, Proc. IEEE, vol. 53, No. 1, p. 98.

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