Electronic device with recovery layer proximate to active layer

Details Electronic device with recovery layer proximate to active layer Electronic device with recovery layer proximate to active layer

1991-02-28

1992-01-14

Hille, Rolf

357 4, 357 2, 357 2314, 357 59, 357 15, 357 30, H01L 4500, H01L 2712, H01L 2978, H01L 2904

Patent

active

050815130

ABSTRACT:
An electronic device including a substantially intrinsic non-single crystal semiconductor active layer having a number of metastable defects therein, the active layer being responsive to the application of stress upon the device by shifting its Fermi level from an equilibrium state within its mobility gap and the spontaneous creation of a surplus number of metastable defects in the mobility gap located in opposition to the shift in the Fermi level, and a recovery layer comprising a doped non-single crystal semiconductor layer positioned in proximity to the active layer and responsive to the application of stress upon the device by changing the number of active dopant atoms therein and thereby changing the charge in the recovery layer, for allowing the excess charge to spill over to the active layer for accelerating the return of the active layer to its equilibrium state.

REFERENCES:
patent: 4674763 (1987-06-01), Ovshinsky et al.
patent: 4686553 (1987-08-01), Possin
patent: 4829358 (1989-05-01), Yamazaki
"Thermally Induced Metastability in Amorphous Silicon Thin-Film Transistors", Lee et al., Applied Physics Letters, vol. 53, No. 26, Dec. 26, 1988, pp. 2617-2619.
Threshold Voltage Control of an A-Si TFT, Oki et al., pp. 186-189, Conference Record of the International Topical Conference on Hydrogenated Amorphous Silicon Devices and Technology, Nov. 21-23, 1988.
Threshold Voltage Shift of Amorphous Silicon Thin-Film Transistors by Step Doping, Matsumoto et al., pp. 606-607, Appl. Phys. Lett 54(7), Feb. 13, 1989.
Proximity Recovery Layers to Speed Up the Recovery of Stressed Amorphous Silicon Thin-Film Transistors, Hack et al., pp. 355-360, Mat. Res. Soc. Symp. Proc., vol. 192, Symposium Held, Apr. 17-20, 1990.

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