Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Reexamination Certificate
2005-05-10
2005-05-10
Tran, Thien F (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
C257S079000
Reexamination Certificate
active
06891185
ABSTRACT:
An electronic device of a preferred embodiment includes a tip emitter formed in a well defined in a substrate. An extractor disposed about the well extracts emissions from the tip emitter. A wide lens is spaced apart from the extractor for focusing the emissions through an opening defined the wide lens. The opening has a diameter greater than a diameter of the well. An aperture is disposed between the extractor and the wide lens.
REFERENCES:
patent: 6188167 (2001-02-01), Endo et al.
patent: 6392355 (2002-05-01), Palmer et al.
patent: 6492781 (2002-12-01), Palmer et al.
Benning Paul J.
Govyadinov Alexander
Knight William R
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