Electronic device wafer level scale packages and fabrication...

Details Electronic device wafer level scale packages and fabrication... Electronic device wafer level scale packages and fabrication...

2011-07-19

2011-07-19

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Making plural separate devices

C438S110000, C438S114000, C438S460000, C438S461000, C438S462000, C438S463000, C438S464000, C438S465000, C257SE21523

Reexamination Certificate

active

07981727

ABSTRACT:
Electronic device wafer level scale packages and fabrication methods thereof. A semiconductor wafer with a plurality of electronic devices formed thereon is provided. The semiconductor wafer is bonded with a supporting substrate. The back of the semiconductor substrate is thinned. A first trench is formed by etching the semiconductor exposing an inter-layered dielectric layer. An insulating layer is conformably deposited on the back of the semiconductor substrate. The insulating layer on the bottom of the first trench is removed to create a second trench. The insulating layer and the ILD layer are sequentially removed exposing part of a pair of contact pads. A conductive layer is conformably formed on the back of the semiconductor. After the conductive layer is patterned, the conductive layer and the contact pads construct an S-shaped connection. Next, an exterior connection and terminal contact pads are subsequently formed.

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