Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2008-04-15
2008-04-15
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S057000, C257S058000, C257S059000, C257S066000, C257S073000
Reexamination Certificate
active
11170157
ABSTRACT:
The present invention provides an electronic device having more than two conductive layers that cross but not in contact with each other. At least one of the conductive layers comprises a width change part, a width of which changes in a length direction of at least one of the conductive layer. The width change part is formed away from a region of at least one of the conductive layers that crosses a neighboring conductive layer. The present invention also provides a flat panel display device that includes the electronic device described above and manufactured in accordance with the principles of the present invention. The electronic device of the present invention may comprise a thin film transistor.
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H.C. Park & Associates PLC
Samsung SDI & Co., Ltd.
Soward Ida M.
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