Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1989-03-21
1992-01-28
Ryan, Patrick J.
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505701, 505702, 505703, 505704, 428426, 428432, 428433, 428688, 428700, 428901, 428930, B32B 900
Patent
active
050844385
ABSTRACT:
An electronic device substrate includes a spinel epitaxial film formed on a silicon single-crystal substrate and an oxide superconductor layer formed on the spinel film. The oxide superconductor layer is represented by formula P.sub.x (Q,Ca).sub.y Cu.sub.z O.sub..delta. and contains at least one element of Bi and Tl as P and at least one element of Sr and Ba as Q. Composition ratios fall within ranges of 0.08.ltoreq.x/(x+y+z).ltoreq.0.41, 0.29.ltoreq.y/(x+y+z).ltoreq.0.47 and 1.ltoreq.Q/Ca.ltoreq.3.
REFERENCES:
CA 111 (24): 223259c, Chak et al., 1989, 76-4 Electric Phenomena.
CA 110 (8): 67103u, Miura et al., 1988, Appl. Phys. Letts. 53 (20) 1967-9.
CA 109 (6): 46792g, Nasu et al., 1988, Jp. Journ. Appl. Phys., Part 2, 27 (4) L634-L635.
"Formation of Si Epi./MgO.Al.sub.2 O.sub.3 Epi./SiO.sub.2 /Si and Its Epitaxial Film Quality" by Masao Mikami et al., Extended Abstracts of the 15th Conference on Solid State Devices and Mateials, Tokyo 1983, pp. 31-34.
Matsubara Shogo
Miura Sadahiko
Miyasaka Yoichi
NEC Corporation
Ryan Patrick J.
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