Electronic device, production method thereof, and plasma...

Details Electronic device, production method thereof, and plasma... Electronic device, production method thereof, and plasma...

2006-08-15

2006-08-15

Toledo, Fernando L. (Department: 2823)

Metal working

Barrier layer or semiconductor device making

C118S7230ER, C156S345420

Reexamination Certificate

active

07090705

ABSTRACT:
A plasma process apparatus for performing a plasma process on a target substrate4includes a process chamber5in which the target substrate4is installed, a gas inlet6for introducing a gas into the process chamber5, and a plasma discharge production section15provided in the process chamber5. The plasma discharge production section15includes a first electrode2aand a second electrode2bthat is closer to the target substrate4than the first electrode2ais. Only surfaces of the first electrode2aand the second electrode2bwhich can be seen in the normal line direction of the target substrate4function as plasma discharge surfaces. Thus, a high quality film is realized even at a low target substrate temperature, and the film formation is performed with high gas dissociation efficiency.

REFERENCES:
patent: 4979467 (1990-12-01), Kamaji et al.
patent: 1-279761 (1989-11-01), None
patent: 11-144892 (1999-05-01), None
patent: 2002-217111 (2002-08-01), None
Chinese Office Action mailed Sep. 2, 2005 (w/English translation thereof).

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