Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-04-19
2011-04-19
Lebentritt, Michael S (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S771000, C257SE21169, C257SE23072, C257SE23159, C257SE29151
Reexamination Certificate
active
07928575
ABSTRACT:
In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film and the first electrode is constructed so that at least a part of alloy components constituting the aluminum alloy film exist as a precipitate or concentrated layer. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows elimination of a barrier metal in such an electronic device, and manufacturing technology therefor.
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Patent Abstracts of Japan, JP 4-116829, Apr. 17, 1992.
Gotoh Hiroshi
Kugimiya Toshihiro
Nakai Jun-ichi
Tomihisa Katsufumi
(Kobe Steel, Ltd.)
Lebentritt Michael S
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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