Coating processes – Measuring – testing – or indicating
Reexamination Certificate
2000-12-11
2004-11-09
Talbot, Brian K. (Department: 1762)
Coating processes
Measuring, testing, or indicating
C427S010000, C427S058000, C427S077000, C427S078000, C427S287000
Reexamination Certificate
active
06815001
ABSTRACT:
TECHNICAL FIELD
The present invention relates to a method of manufacturing an electronic device and a device for manufacturing the same, and more particularly to a method of manufacturing an electronic device manufactured through a process of giving a droplet of a liquid including a formation material of a member that constitutes the electronic device onto a substrate and a device for manufacturing the electronic device.
BACKGROUND ART
Up to now, known electron emission elements are roughly classified into two kinds of a thermionic electron emission element and a cold cathode electron emission element. The cold cathode electron emission element includes a field emission type (hereinafter referred to as “FE type”), a metal/insulating layer/metal type (hereinafter referred to as “MIM type”), a surface conduction type electron emission element, etc.
Examples of the FE type have been disclosed in “Field Emission” of Advance in Electron Physics, 8,89 (1956) by W. P. Dyke and W. W. Dolan, “Physical Properties of thin-film field emission cathodes with molybdenum cones” of J. Appl. Phys., 47,5248 (1976), by C. A. Spindt, etc.
Examples of the MIM type have been disclosed in “Operation of Tunnel-Emission Devices” of J. Appl., Phys., 32,646(1961), by C. A. Mead, etc.
Examples of the surface conduction type electron emission element have been disclosed in Radio Eng. Electron Phys., 10, 1290(1965) by M. I. Elinson, etc.
The surface conduction type electron emission element utilizes a phenomenon in which electron emission occurs by allowing a current to flow into a small-area thin film formed on an insulating substrate in parallel to a film surface.
As the surface conduction type electron emission element, there have been reported a surface conduction type electron emission element using an SnO
2
thin film by M. I. Elinson, etc., a surface conduction type electron emission element using an Au thin film [G. Dittmer: “Thin Solid Films”, 9,317 (1972)], a surface conduction type electron emission element using an In
2
O
3
/SnO
2
thin film [M. Hartwell and C. G. Fonstad: “IEEE Trans. ED Conf.”, 519(1975)], a surface conduction type electron emission element using a carbon thin film [“Vapor Vacuum” of Volume 26, No. 1, p 22 (1983), by Hisashi Araki, et al.], etc.
As a typical example of those surface conduction type electron emission elements, the structure of the above-mentioned element by M. Hartwell is schematically shown in FIG.
25
. In the figure, reference numeral
2001
denotes a substrate. Reference numeral
2004
denotes an electrically conductive film that is formed of a metal oxide thin film formed in an H-shaped pattern, etc., where there is formed an electron emission portion
2005
through an electrifying process called “electrification forming” which will be described later. In the figure, an interval L between the element electrodes is set to 0.5 to 1 mm, and W′ is set to 0.1 mm.
In those surface conduction type electron emission elements, it is general that the electron emission portion
2005
is formed on the electrically conductive film
2004
through the electrifying process which is called “electrification forming” before the electron emission is conducted. In other words, the electrification forming is a process in which a voltage is applied to both ends of the electrically conductive film
2004
so that the electrically conductive film
2004
is electrified, to thereby locally destroy, deform or affect the electrically conductive film
2004
to change the structure, thus forming the electron emission portion
2005
which is in an electrically high-resistant state. A fissure occurs in a part of the electrically conductive film
2004
on the electron emission portion
2005
, and electrons are emitted from a portion close to the fissure.
The above surface conduction type electron emission element is advantageous in that a large number of elements can be arranged over a large area, because the structure is simple. Accordingly, various applications for making the best use of that advantage have been researched. For example, the surface conduction type electron emission element is applied to a charge beam source or an image forming apparatus such as a display device.
Up to now, as an example in which a large number of surface conduction type electron emission elements are arranged, there is an electron source in which the surface conduction type electron emission elements are arranged in parallel with each other, and a large number of lines obtained by connecting both ends (both of element electrodes) of the respective surface conduction type electron emission elements to each other by wirings (also called “common wirings”), respectively, are arranged (also called “ladder-type arrangement”) (for example, Japanese Patent Application Laid-open No. 64-31332, Japanese Patent Application Laid-open No. 1-283749 and Japanese Patent Application Laid-open No. 2-257552).
Also, in particular, in the display device, a plate-type display device similarly to the display device using the liquid crystal can be provided, and there has been proposed a display device that combines an electron source in which a large number of surface conduction type electron emission elements are arranged with a fluorescent material that emits a visible light with being irradiated with an electron ray from the electron source (U.S. Pat. No. 5,066,883).
Also,
FIG. 26
is a perspective view showing the structure of an electron emission element disclosed in Japanese Patent Application Laid-open No. 2-56822. In the figure, reference numeral
3001
denote a substrate;
3002
and
3003
, element electrodes;
3004
, an electrically conductive film; and
3005
, an electron emission portion. There have been proposed various methods of manufacturing the electron emission element. For example, the element electrodes
3002
and
3003
are formed on the substrate
3001
through a general vacuum evaporation technique or a photolithgraphy technique. Then, the electrically conductive film
3004
is formed through a dispersion coating method. Thereafter, a voltage is applied to the element electrodes
3002
and
3003
to conduct an electrifying process, thereby forming the electron emission portion
3005
.
However, the conventional method of manufacturing the electron emission element suffers from such defects that the number of processes are large, it is difficult to form the electron emission elements on the large area through the existing technique, a special and expensive manufacturing device is required and the production costs are high, because the semiconductor process is mainly conducted in the conventional method.
Under the above circumstances, the present applicants have studied an electron source substrate obtained in such a manner that a solution containing a metal is ejected onto a substrate in the state of a droplet to form element electrodes and element films, and the elements are arranged on an insulating substrate in matrix.
For example, Japanese Patent Application Laid-open No. 8-171850 discloses a method of manufacturing the element electrode and the element film using an ink jet method, and also Japanese Patent Application Laid-open No. 9-069334 and EP-A-0717428 disclose a method in which a liquid droplet is supplied onto a substrate disposed on a stage through an ink jet method while the stage is scanned, to thereby form the element film.
On the other hand, as an example in which an electronic device other than the electron emission element and the electron source is manufactured through the ink jet method, there has been disclosed a method of manufacturing a color filter by using the ink jet method in Japanese Patent Application Laid-open No. 8-327816.
However, in the method of manufacturing the above-described electron emission element by using the ink jet method and the manufacturing device thereof, since there is provided no correcting mechanism for correcting a position to which a droplet is given in accordance with the deformation of the substrate (distortion and u
Hasegawa Mitsutoshi
Mishima Seiji
Sando Kazuhiro
Shigeoka Kazuya
Yoshioka Toshifumi
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Talbot Brian K.
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