Electronic device manufacturing method

Details Electronic device manufacturing method Electronic device manufacturing method

2005-05-31

2005-05-31

Arbes, Carl J. (Department: 3729)

Metal working

Method of mechanical manufacture

Electrical device making

C029S825000, C029S830000, C029S832000, C029S840000, C029S846000, C438S623000, C438S634000, C438S637000, C438S638000, C438S687000

Reexamination Certificate

active

06898851

ABSTRACT:
It is an object to provide a semiconductor device having a buried multilayer wiring structure in which generation of a resolution defect of a resist pattern is suppressed and generation of a defective wiring caused by the resolution defect is reduced. After a via hole (7) reaching an etching stopper film (4) is formed, annealing is carried out at 300 to 400° C. with the via hole (7) opened. As an annealing method, it is possible to use both a method using a hot plate and a method using a heat treating furnace. In order to suppress an influence on a lower wiring (20) which has been manufactured, heating is carried out for a short time of approximately 5 to 10 minutes by using the hot plate. Consequently, a by-product staying in an interface of an upper protective film (6) and an interlayer dielectric film (5) having a low dielectric constant and a by-product staying in an interface of the etching stopper film (4) and the interlayer dielectric film (5) having a low dielectric constant are discharged so that an amount of the residual by-product can be decreased.

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