Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2004-06-24
2008-11-11
Blouin, Mark (Department: 2627)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
Reexamination Certificate
active
07450348
ABSTRACT:
An electronic device free from variation of conductivity is provided. The electronic device100includes electrodes2and3;and a metal conductor thin film7electrically connected to the electrodes2and3.The metal conductor thin film7includes a metal conductor portion1that bridges a gap between the electrodes2and3.The bridge length L of the metal conductor portion1is not more than a mean free path Λ of electron in the metal conductor portion1at the operation temperature of the electronic device1.The electronic device100is formed by forming the electrodes2and3on the substrate8with a gap having the bridge length L; forming a support4that includes at least one selected from the group consisting of a nano-tube and a nano-wire and bridges a gap between the electrodes2and3;and forming the metal conductor portion1by depositing the metal conductor thin film7on the support4,and the electrodes2and3.
REFERENCES:
patent: 6631056 (2003-10-01), Asatani et al.
patent: 2002/0163079 (2002-11-01), Awano
patent: 2003/0020025 (2003-01-01), Nakayama et al.
patent: 5-90569 (1993-04-01), None
patent: 2003-8105 (2003-01-01), None
patent: 97-47982 (1997-12-01), None
patent: 01/39292 (2001-05-01), None
patent: 02/063693 (2002-08-01), None
patent: 03/048433 (2003-06-01), None
M.N. Baibich et al., “Giant Magnetoresistance of (001) Fe/(001) Cr Magnetic Superlattices”, Physical Review Letters, No. 21, vol. 61, p. 2472 (1988).
T. Miyazaki et al., “Giant magnetic tunneling effect in Fe/Al2O3/Fe junction”, Journal of Magnetism and Magnetic Materials 139 (1995) L231.
Tsukagoshi et al. “Coherent transport of electron spin in a ferromagnetically contacted carbon nanotube”, Letters of Nature vol. 401 (1999) p. 572.
Franklin et al., Advanced Materials vol. 12 (2000) p. 890.
Hua et al. “100,000% ballistic magnetoresistance in stable Ni nanocontacts at room temperature”, Physical Review B 67 (2003) p. 60401.
S. Frank et al., “Carbon Nanotube Quantum Resistors”, Science vol. 280 (1998) p. 1744.
Prinz, Gary A., “Magnetoelectronics applications”, Journal of magnetism and Magnetic Materials 200 (1999) 57-68.
Zhang, et al., “Formation of Metal nanowires on suspended single-walled carbon nanotubes” Applied Physics Letters, vol. 77, No. 19, Nov. 2000, pp. 3015-3017.
Hua, et al., “100,000% ballistic magnetoresistance in stable Ni nanocontacts at room temperature”, Physical Review B 67, pp. 060401-1-060401-4, 2003.
Blouin Mark
Hamre Schumann Mueller & Larson P.C.
Panasonic Corporation
LandOfFree
Electronic device, magnetoresistance effect element;... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electronic device, magnetoresistance effect element;..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electronic device, magnetoresistance effect element;... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4034039