Electronic device including a transistor structure having an...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Reexamination Certificate

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C257S020000, C257S190000, C257S505000, C257S506000, C257S507000, C257S509000, C257S524000, C438S151000, C438S196000, C438S404000, C438S405000, C438S595000, C438S764000, C438S765000, C438S769000, C438S770000, C438S775000, C438S778000, C438S787000, C438S791000, C372S045011

Reexamination Certificate

active

11269303

ABSTRACT:
An electronic device can include a transistor structure of a first conductivity type, a field isolation region, and a layer of a first stress type overlying the field isolation region. For example, the transistor structure may be a p-channel transistor structure and the first stress type may be tensile, or the transistor structure may be an n-channel transistor structure and the first stress type may be compressive. The transistor structure can include a channel region that lies within an active region. An edge of the active region includes the interface between the channel region and the field isolation region. From a top view, the layer can include an edge the lies near the edge of the active region. The positional relationship between the edges can affect carrier mobility within the channel region of the transistor structure.

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Shimizu, A. et al. “Local Mechanical-Stress Control (LMC): A New Technique for CMOS-Performance Enhancement,” IEDM 2001.
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U.S. Appl. No. 11/148,455, filed Jun. 9, 2005.

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