Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2007-08-06
2008-12-30
Phan, Trong (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185050, C365S185180, C365S185260, C365S185330
Reexamination Certificate
active
07471560
ABSTRACT:
An electronic circuit can include a first memory cell and a second memory cell. In one embodiment, source/drain regions of the first and second memory cells can be electrically connected to each other. The source/drain regions may electrically float regardless of direction in which carriers flow through channel regions of the memory cells. In another embodiment, the first memory cell can be electrically connected to a first gate line, and the second memory cell can be electrically connected to a greater number of gate lines as compared to the first memory cell. In another aspect, the first and second memory cells are connected to the same bit line. Such bit line can electrically float when programming or reading the first memory cell or the second memory cell or any combination thereof.
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Chindalore Gowrishankar L.
Hong Cheong M.
Yater Jane A.
Freescale Semiconductor Inc.
Phan Trong
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