Electronic device including a guest material within a layer...

Details Electronic device including a guest material within a layer... Electronic device including a guest material within a layer...

2007-08-17

2008-09-02

Mulpuri, Savitri (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S089000, C257SE31001, C257SE51022

Reexamination Certificate

active

07420205

ABSTRACT:
An electronic device made by a process that includes forming a first layer over a substrate and placing a first liquid composition over a first portion of the first layer. The first liquid composition includes at least a first guest material and a first liquid medium. The first liquid composition comes in contact with the first layer and a substantial amount of the first guest material intermixes with the first layer. An electronic device includes a substrate and a continuous first layer overlying the substrate. The continuous layer includes a first portion in which an electronic component lies and a second portion where no electronic component lies. The first portion is at least 30 nm thick and includes a first guest material, and the second portion is no more than 40 nm thick.

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