Electronic device, in particular for switching electric currents

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide

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257124, 257133, H01L 2978, H01L 3300

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active

061570494

ABSTRACT:
A p-n junction is connected between two terminals. The p-n junction is formed between two semiconductor regions of a semiconductor with a breakdown field strength of at least 10.sup.6 V/cm. A channel region, which adjoins the p-n junction is connected in series with a silicon component between the two terminals. The channel region is provided in a first of the two semiconductor regions. A depletion zone of the p-n junction carries the reverse voltage in the off state of the silicon component. The silicon component is preferably a

REFERENCES:
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patent: 5406096 (1995-04-01), Mahli
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patent: 6002143 (1999-12-01), Terasawa
"Critical nature of Oxide/Interface quality for SiC Power Devices", B. Baliga, 8226 Microelectronic Engineering, Jun. 28, 1995, Nos. 1/4, Amsterdam, Netherlands, pp. 177-184.
"Junction Breakdown", A.S. Grove, Physics and Technology of Semiconductor Devices, pp. 191-194.
"High-Speed Semiconductor Devices", S.M. Sze, A Wiley-Interscience Publication, John Wiley & Sohns, Inc., pp. 234-235 and 266-267.
Published International Application No. 95/24055 (Mitlehner et al.), dated Sep. 8, 1995.

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