Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2007-05-07
2011-12-27
Eashoo, Mark (Department: 1767)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S347000, C257S410000, C428S447000, C524S261000, C528S268000
Reexamination Certificate
active
08084765
ABSTRACT:
An electronic device, such as a thin film transistor, is disclosed having a dielectric layer formed from a composition comprising a compound having at least one phenol group and at least one group containing comprising silicon. The resulting dielectric layer has good electrical properties.
REFERENCES:
patent: 4480009 (1984-10-01), Berger
patent: 5726271 (1998-03-01), Furukawa et al.
patent: 6015869 (2000-01-01), Grate et al.
patent: 6031012 (2000-02-01), Nakanishi et al.
patent: 6498010 (2002-12-01), Fitzgerald et al.
patent: 6602551 (2003-08-01), Kerboua et al.
patent: 6660230 (2003-12-01), McGill et al.
patent: 6773809 (2004-08-01), Itoh et al.
patent: 6780517 (2004-08-01), Chen et al.
patent: 6872454 (2005-03-01), Newberth et al.
patent: 6991887 (2006-01-01), Grate et al.
patent: 7005674 (2006-02-01), Lee et al.
patent: 7034089 (2006-04-01), Herr et al.
patent: 7422831 (2008-09-01), Yu
patent: 7553706 (2009-06-01), Liu et al.
patent: 7655738 (2010-02-01), Keller et al.
patent: 7678864 (2010-03-01), Lens et al.
patent: 7737291 (2010-06-01), Osasawara et al.
patent: 2003/0049465 (2003-03-01), Kerboua et al.
patent: 2004/0033700 (2004-02-01), Gronbeck et al.
patent: 2004/0122186 (2004-06-01), Herr et al.
patent: 2004/0137241 (2004-07-01), Lin et al.
patent: 2004/0213971 (2004-10-01), Colburn et al.
patent: 2004/0242829 (2004-12-01), Sugo
patent: 2005/0017311 (2005-01-01), Ong et al.
patent: 2005/0090015 (2005-04-01), Hartmann-Thompson
patent: 2005/0209400 (2005-09-01), Tsumura et al.
patent: 2005/0211978 (2005-09-01), Bu et al.
patent: 2006/0097249 (2006-05-01), Kim et al.
patent: 2006/0204742 (2006-09-01), Gronbeck et al.
patent: 2006/0214159 (2006-09-01), Nakayama et al.
patent: 2006/0231908 (2006-10-01), Liu et al.
patent: 2006/0234430 (2006-10-01), Liu et al.
patent: 2006/0243947 (2006-11-01), Tsumura et al.
patent: 2007/0043195 (2007-02-01), McGill et al.
patent: 2007/0059623 (2007-03-01), Yu
patent: 2007/0081830 (2007-04-01), Bender et al.
patent: 2007/0096079 (2007-05-01), Nakayama et al.
patent: 2007/0145453 (2007-06-01), Wu et al.
patent: 2007/0207326 (2007-09-01), Mizuno et al.
patent: 2007/0232821 (2007-10-01), Ogasawara et al.
patent: 2007/0268556 (2007-11-01), Chopra et al.
patent: 2007/0269653 (2007-11-01), Kanamori et al.
patent: 2008/0153994 (2008-06-01), Lens et al.
patent: 2008/0277724 (2008-11-01), Qi et al.
patent: 2008/0306294 (2008-12-01), Lens et al.
Mathias et al. Macromolecules 1993, 26, 4070-4071.
Barciniec “Hydrosilation” Chapter 6 Hydrosilyation Polymerization (DOI 10.1007/978-1-4020-8172-9—6) 2009. pp. 191-214.
Li Yuning
Ong Beng S.
Qi Yu
Wu Yiliang
Eashoo Mark
Fay Sharpe LLP
Salvitti Michael
Xerox Corporation
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