Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2006-09-12
2006-09-12
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S734000, C257S773000, C257S775000
Reexamination Certificate
active
07105861
ABSTRACT:
Electronic device contact structures are disclosed.
REFERENCES:
patent: 3293513 (1966-12-01), Biard et al.
patent: 3739217 (1973-06-01), Bergh
patent: 3922706 (1975-11-01), Kaiser
patent: 4864370 (1989-09-01), Gaw et al.
patent: 5073041 (1991-12-01), Rastani
patent: 5132751 (1992-07-01), Shibata et al.
patent: 5162878 (1992-11-01), Sasagawa et al.
patent: 5359345 (1994-10-01), Hunter
patent: 5363009 (1994-11-01), Monto
patent: 5376580 (1994-12-01), Kish
patent: 5426657 (1995-06-01), Vakhshoori
patent: 5491350 (1996-02-01), Unno et al.
patent: 5528057 (1996-06-01), Yanagase
patent: 5600483 (1997-02-01), Fan et al.
patent: 5631190 (1997-05-01), Negley
patent: 5633527 (1997-05-01), Lear
patent: 5724062 (1998-03-01), Hunter
patent: 5744828 (1998-04-01), Nozaki et al.
patent: 5779924 (1998-07-01), Krames et al.
patent: 5793062 (1998-08-01), Kish, Jr. et al.
patent: 5814839 (1998-09-01), Hosoba
patent: 5834331 (1998-11-01), Razeghi
patent: 5955749 (1999-09-01), Joannopoulos et al.
patent: 6071795 (2000-06-01), Cheung et al.
patent: 6072628 (2000-06-01), Sarayeddine
patent: 6091085 (2000-07-01), Lester
patent: 6122103 (2000-09-01), Perkins et al.
patent: 6169294 (2001-01-01), Biing-Jye et al.
patent: 6222207 (2001-04-01), Carter-Coman et al.
patent: 6287882 (2001-09-01), Chang et al.
patent: 6288840 (2001-09-01), Perkins et al.
patent: 6303405 (2001-10-01), Yoshida et al.
patent: 6307218 (2001-10-01), Steigerwald et al.
patent: 6340824 (2002-01-01), Komoto
patent: 6410348 (2002-06-01), Chen
patent: 6410942 (2002-06-01), Thibeault et al.
patent: 6420242 (2002-07-01), Cheung et al.
patent: 6426515 (2002-07-01), Ishikawa et al.
patent: 6465808 (2002-10-01), Lin
patent: 6468824 (2002-10-01), Chen
patent: 6469324 (2002-10-01), Wang
patent: 6486500 (2002-11-01), Chen
patent: 6504180 (2003-01-01), Heremans et al.
patent: 6522063 (2003-02-01), Chen et al.
patent: 6534798 (2003-03-01), Scherer et al.
patent: 6559075 (2003-05-01), Kelly et al.
patent: 6573537 (2003-06-01), Steigerwald et al.
patent: 6574383 (2003-06-01), Erchak et al.
patent: 6593160 (2003-07-01), Carter-Coman et al.
patent: 6614056 (2003-09-01), Tarsa et al.
patent: 6627521 (2003-09-01), Furukawa
patent: 6642618 (2003-11-01), Yagi et al.
patent: 6649437 (2003-11-01), Yang et al.
patent: 6657236 (2003-12-01), Thibeault et al.
patent: 6661028 (2003-12-01), Chen
patent: 6690268 (2004-02-01), Schofield et al.
patent: 6740906 (2004-05-01), Slater, Jr. et al.
patent: 6742907 (2004-06-01), Funamoto et al.
patent: 6762069 (2004-07-01), Huang et al.
patent: 6784027 (2004-08-01), Streubel et al.
patent: 6784463 (2004-08-01), Camras et al.
patent: 6791117 (2004-09-01), Yoshitake
patent: 6791119 (2004-09-01), Slater, Jr. et al.
patent: 6791259 (2004-09-01), Stokes
patent: 6794684 (2004-09-01), Slater, Jr. et al.
patent: 6800500 (2004-10-01), Coman
patent: 6803603 (2004-10-01), Nitta et al.
patent: 6812503 (2004-11-01), Lin
patent: 6818531 (2004-11-01), Yoo
patent: 6825502 (2004-11-01), Okazaki et al.
patent: 6828597 (2004-12-01), Wegleiter et al.
patent: 6828724 (2004-12-01), Burroughes
patent: 6831302 (2004-12-01), Erchak et al.
patent: 6847057 (2005-01-01), Gardner et al.
patent: 6878969 (2005-04-01), Tanaka
patent: 6891203 (2005-05-01), Kozawa
patent: 6900587 (2005-05-01), Suehiro
patent: 6924163 (2005-08-01), Okazaki et al.
patent: 6943379 (2005-09-01), Suehiro
patent: 6946683 (2005-09-01), Sano et al.
patent: 6958494 (2005-10-01), Lin et al.
patent: 2002/0110172 (2002-08-01), Hasnein et al.
patent: 2003/0141507 (2003-07-01), Krames et al.
patent: 2003/0141563 (2003-07-01), Wang
patent: 2003/0143772 (2003-07-01), Chen
patent: 2003/0222263 (2003-12-01), Choi
patent: 2004/0027062 (2004-02-01), Shiang et al.
patent: 2004/0043524 (2004-03-01), Huang et al.
patent: 2004/0130263 (2004-07-01), Horng
patent: 2004/0182914 (2004-09-01), Venugopalan
patent: 2004/0206962 (2004-10-01), Erchak et al.
patent: 2004/0206971 (2004-10-01), Erchak et al.
patent: 2004/0207310 (2004-10-01), Erchak et al.
patent: 2004/0207319 (2004-10-01), Erchak et al.
patent: 2004/0207320 (2004-10-01), Erchak
patent: 2004/0207323 (2004-10-01), Erchak et al.
patent: 2004/0259279 (2004-12-01), Erchak et al.
patent: 2004/0259285 (2004-12-01), Erchak et al.
patent: 2005/0019971 (2005-01-01), Slater
patent: 2005/0040424 (2005-02-01), Erchak et al.
patent: 2005/0051785 (2005-03-01), Erchak et al.
patent: 2005/0051787 (2005-03-01), Erchak et al.
patent: 2005/0059178 (2005-03-01), Erchak et al.
patent: 2005/0059179 (2005-03-01), Erchak et al.
patent: 2005/0082545 (2005-04-01), Wierer
patent: 2005/0087754 (2005-04-01), Erchak
patent: 2005/0087757 (2005-04-01), Erchak et al.
patent: 2005/0112886 (2005-05-01), Asakawa
patent: 2005/0127375 (2005-06-01), Erchak et al.
patent: 2005/0205883 (2005-09-01), Wierer
patent: WO 98/14986 (1998-04-01), None
patent: 02/41406 (2002-05-01), None
patent: 02/089221 (2002-07-01), None
patent: 02/071450 (2002-09-01), None
patent: 2005/004231 (2005-01-01), None
W.S. Wong et al. “Damage-free separation of GaN thin films from sapphire substrates”, Appl. Phys. Lett. 72 (5), Feb. 2, 1998, pp. 599-601.
M.K. Kelly et al. “Optical process for liftoff of Group III-nitride films”, Physica Status Solidi; Rapid Research Note, Nov. 28, 1996, 2 pages.
A. A. Erchak et al. “Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode”, Appl. Phys. Lett. (78 (5), Jan. 29, 2001, pp. 563-565.
P.L. Gourley et al. “Optical properties of two-dimensional photonic lattices fabricated as honeycomb nanostructures in compound semiconductors”, Appl. Phys. Lett. 64(6), Feb. 7, 1994, pp. 687-689.
P.L. Gourley et al. “Optical Bloch waves in a semiconductor photonic lattice”, Appl. Phys. Lett. 60 (22), Jun. 1, 1992, pp. 2714-2716.
J.R. Wendt et al. “Nanofabrication of photonic lattice structures in GaAs/AIGaAs”, J. Vac. Sci. Technol. B 11(6), Nov./Dec. 1993, pp. 2637-2640.
M. Krames et al “Introduction to the Issue on High-Efficiency Light-Emitting Diodes”, IEEE Journal on selected topic in quantum electronics, vol. 8, No. 2 Mar./Apr. 2002, pp. 185-188.
K. Streubel et al.. “High Brightness AlGaInP Light-Emitting Diodes”, IEEE Journal on selected topic in quantum electronics, vol. 8, No. 2, Mar./Apr. 2002, pp. 321-332.
M. Okai et al. “Novel method to fabricate corrugation for a λ/4-shifted distributed feedback laser using a granting photomask”, Appl. Phys. Lett. 55(5), Jul. 31, 1989, pp. 415-417.
T.L. Koch et al. “1.55-μ InGaAsP distributed feedback vapor phase transported buried heterostructure lasers”, Appl. Phys. Lett. 47 (1), Jul. 1, 1985, pp. 12-14.
W.T. Tsang et al. “Semiconductor distributed feedback lasers with quantum well or superlattice grating for index or gain-coupled optical feedback”, Appl. Phys. Lett. 60 (21), May 25, 1992, pp. 2580-2582.
M. Zelsmann et al. “Seventy-fold enhancement of light extraction from a defectless photonic crystal made on silicon-on-insulator”, Appl. Phys. Lett. 83 (13), Sep. 29, 2003, pp. 2542-2544.
M. Rattier et al. “Omnidirectional and compact guided light extraction from Archimedean photonic lattices”, Appl. Phys. Lett. 83 (7), Aug. 18, 2003, pp. 1283-1285.
Y.-J. Lee et al. “A high-extraction-efficiency nanopatterned organic light-emitting diode”, Appl. Phys. Lett. 82(21), May 26, 2003, pp. 3779-3781.
I. Schnitzer et al. “30% external quantum efficiency from surface textured, thin-film light-emitting diodes”, Appl. Phys. Lett. 63 (18), Oct. 18, 1993, pp. 2174-2176.
M. Boroditsky et al. “Light extraction from optically pumped light-emitting diode by thin-slab photonic crystals”, Appl. Phys. Lett. 75 (8), Aug. 23, 1999, pp. 1036-1038.
L. Chen et al. “Fabrication of 50-100 nm Patterned InGaN Blue Light Emitting Heterostructures”, Phys. Stat. Sol. (a), 188 (1), 2001, pp. 135-138, Dec. 2001.
I. Bulu et al. “Highly directive radiation
Erchak Alexei A.
Graff John W.
Lidorikis Eleftrios
Luminus Devices, Inc.
Prenty Mark V.
Wolf Greenfield & Sacks P.C.
LandOfFree
Electronic device contact structures does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electronic device contact structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electronic device contact structures will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3573547