Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2010-07-29
2011-10-11
Dang, Phuc (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S066000, C257S347000
Reexamination Certificate
active
08035106
ABSTRACT:
An integrated circuit, which is configured such that a MOS transistor and a bipolar transistor are integrated at the same time, is formed on an insulating substrate which includes a display device. An electronic device or a display includes a plurality of semiconductor devices which are formed by using a semiconductor thin film and are formed in the semiconductor thin film that is provided on an insulating substrate and is crystallized in a predetermined direction. The plurality of semiconductor devices include a MOS transistor and at least either one of a lateral bipolar thin-film transistor and a MOS-bipolar hybrid thin film transistor.
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U.S. Appl. No. 12/846,392, filed Jul. 29, 2010, Kawachi.
Advanced LCD Technologies Development Center Co. Ltd.
Dang Phuc
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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