Electronic device, constituted by using thin-film transistors

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...

Reexamination Certificate

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C257S066000, C257S347000

Reexamination Certificate

active

08035106

ABSTRACT:
An integrated circuit, which is configured such that a MOS transistor and a bipolar transistor are integrated at the same time, is formed on an insulating substrate which includes a display device. An electronic device or a display includes a plurality of semiconductor devices which are formed by using a semiconductor thin film and are formed in the semiconductor thin film that is provided on an insulating substrate and is crystallized in a predetermined direction. The plurality of semiconductor devices include a MOS transistor and at least either one of a lateral bipolar thin-film transistor and a MOS-bipolar hybrid thin film transistor.

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patent: 7345657 (2008-03-01), Kimura
patent: 7508034 (2009-03-01), Takafuji et al.
patent: 7588973 (2009-09-01), Ushiku
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patent: 2003-76345 (2003-03-01), None
patent: 2005-18088 (2005-01-01), None
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U.S. Appl. No. 12/846,392, filed Jul. 29, 2010, Kawachi.

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