Electronic device and process achieving a reduction in alpha par

Details Electronic device and process achieving a reduction in alpha par Electronic device and process achieving a reduction in alpha par

1993-02-16

1995-03-07

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437240, H01L 2170, H01L 2700

Patent

active

053957830

ABSTRACT:
Reduced soft errors in charge-sensitive circuit elements such as volatile memory cells 200 occur by using boron-11 to the exclusion of boron-10 or essentially free of boron-10 in borosilicate glass 230, 240 deposited on the substrate 206 directly over the arrays of memory cells. Boron-10 exhibits a high likelihood of fission to release a 1.47 MeV alpha particle upon capture of a naturally occurring cosmic ray neutron. This capture occurs frequently in boron-10 because of its high neutron capture cross-section. Boron-11 does not fission.

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Takada, M., et al., "A 4Mb DRAM with Half Internal-Voltage Bitline Precharge", ISSCC 1986, pp. 270-271.

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