Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents
Reexamination Certificate
2007-03-27
2007-03-27
Picardat, Kevin M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With provision for cooling the housing or its contents
C257S675000, C257S778000, C257SE23080, C438S122000, C438S127000
Reexamination Certificate
active
10539367
ABSTRACT:
The electronic device (100) is a chip-on-chip construction on a lead frame (10) comprising a heat sink (13) in an encapsulation (80). The first chip (20) and the second chip (30) are mutually connected by first conductive interconnections (24) and the first chip (20) is connected to the lead frame (10) by second conductive interconnections (27) which preferably have a lower reflow temperature than the first conductive interconnections (24). By heating the device (100) the adhesive layer (25) will first shrink, causing a stress, which will be relaxated by reflowing the second conductive interconnections (27).
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Hochstenbach Hendrik Pieter
Van Der Meulen Rintje
Van Eck Andrea Henricus Maria
NXP B.V.
Picardat Kevin M.
Zawilski Peter
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