Electronic device and method of making the same

Details Electronic device and method of making the same Electronic device and method of making the same

2007-01-29

2009-10-27

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S012000, C438S478000, C438S962000, C977S762000

Reexamination Certificate

active

07608854

ABSTRACT:
An electronic device includes a primary nanowire of a first conductivity type, and a secondary nanowire of a second conductivity type extending outwardly from the primary nanowire. A doped region of the second conductivity type extends from the secondary nanowire into at least a portion of the primary nanowire.

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Yasseri,et al,“Electroless Deposition of Au Nanocrystals on Si(111)Surfaces as Catalysts for Epitaxial Growth of Si Nanowires”Electrochemical & Solid-State Ltrs(2006)C185-C188.
Yasseri, et al. “Growth and Use of Metal Nanycrystal Assemblies on High-Density Silicon Nanowires Formed by Chemical Vapor Deposition”, Appl.Phys.A 82, (2006),pp. 659-664.

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