Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2006-07-04
2006-07-04
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S101000, C257S183000, C257S184000, C257S509000, C505S110000
Reexamination Certificate
active
07071496
ABSTRACT:
An electronic device including a new oxide layer and a method for manufacturing the same are provided. The electronic device of the present invention includes an oxide layer, which is formed of an oxide containing an element from group IIa, an element from group IIb and an element from group IIIb. For example, it can be applied to a solar cell including a back electrode serving as a first electrode layer, a transparent electrically conductive film serving as a second electrode layer having a light-transmitting property, and a semiconductor layer that is provided between the back electrode and the transparent electrically conductive film and functions as a light-absorption layer, and including an oxide layer provided between the semiconductor layer and the transparent electrically conductive film.
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patent: 6153895 (2000-11-01), Watanabe et al.
patent: 6259016 (2001-07-01), Negami et al.
patent: 6635307 (2003-10-01), Huang et al.
patent: 2000-323733 (2000-11-01), None
Hashimoto Yasuhiro
Inoue Hironobu
Negami Takayuki
Hamre Schumann Mueller & Larson P.C.
Nelms David
Tran Mai-Huong
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