Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Lateral bipolar transistor structure
Reexamination Certificate
2005-12-27
2005-12-27
Zarneke, David A. (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Lateral bipolar transistor structure
C257S643000, C257S644000, C257S771000, C257S765000, C257S767000
Reexamination Certificate
active
06979882
ABSTRACT:
An electronic device is provided using wiring comprising aluminum to prevent hillock or whisker from generating, wherein the wiring contains oxygen atoms at a concentration of 8×1018atoms·cm−3or less, carbon atoms at a concentration of 5×1018atoms·cm−3or less, and nitrogen atoms at a concentration of 7×1017atoms·cm−3or less; furthermore, a silicon nitride film is formed on the aluminum gate, and an anodic oxide film is formed on the side planes thereof.
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