Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-01-18
2005-01-18
Zarneke, David A. (Department: 2827)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S559000, C257S644000, C257S765000, C174S260000, C438S150000
Reexamination Certificate
active
06844628
ABSTRACT:
An electronic device is provided using wiring comprising aluminum to prevent hillock or whisker from generating, wherein the wiring contains oxygen atoms at a concentration of 8×1018atoms·cm−3or less, carbon atoms at a concentration of 5×1018atoms·cm−3or less, and nitrogen atoms at a concentration of 7×1017atoms·cm−3or less; furthermore, a silicon nitride film is formed on the aluminum gate, and an anodic oxide film is formed on the side planes thereof.
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Teramoto Satoshi
Yamazaki Shunpei
Fish & Richardson P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Zarneke David A.
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