Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2005-05-10
2005-05-10
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S026000, C438S055000, C438S125000, C438S126000, C438S456000, C438S457000, C438S458000, C438S459000
Reexamination Certificate
active
06890834
ABSTRACT:
An Al film is formed on a cap wafer and the Al film is patterned into a ring-shaped film. Dry etching is performed by using the ring-shaped film as a mask to form a drum portion enclosing a recess portion to provide a vacuum dome. After forming a depth of cut into the substrate portion of the cap wafer, the cap wafer is placed on a main body wafer having an infrared area sensor formed thereon. Then, the ring-shaped film of the cap wafer and the ring-shaped film of the main body wafer are joined to each other by pressure bonding to form a ring-shaped joining portion.
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Notice of Reasons of Rejection for Patent Application No. 2002-161816 mailed Oct. 21, 2003 and English translation.
Hashimoto Masahiko
Komobuchi Hiroyoshi
Kubo Minoru
Okajima Michio
Yamamoto Shin-ichi
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