Electronic device and method for manufacturing the same

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates

Reexamination Certificate

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C438S026000, C438S055000, C438S125000, C438S126000, C438S456000, C438S457000, C438S458000, C438S459000

Reexamination Certificate

active

06890834

ABSTRACT:
An Al film is formed on a cap wafer and the Al film is patterned into a ring-shaped film. Dry etching is performed by using the ring-shaped film as a mask to form a drum portion enclosing a recess portion to provide a vacuum dome. After forming a depth of cut into the substrate portion of the cap wafer, the cap wafer is placed on a main body wafer having an infrared area sensor formed thereon. Then, the ring-shaped film of the cap wafer and the ring-shaped film of the main body wafer are joined to each other by pressure bonding to form a ring-shaped joining portion.

REFERENCES:
patent: 6297072 (2001-10-01), Tilmans et al.
patent: 6391742 (2002-05-01), Kawai
patent: 6458618 (2002-10-01), Allen et al.
patent: 20020081821 (2002-06-01), Cabuz et al.
patent: 20020088537 (2002-07-01), Silverbrook
patent: 20020096743 (2002-07-01), Spooner et al.
patent: 11111878 (1999-04-01), None
patent: 2000-133817 (2000-05-01), None
patent: WO 9517014 (1995-06-01), None
Notice of Reasons of Rejection for Patent Application No. 2002-161816 mailed Oct. 21, 2003 and English translation.

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