Electronic device and method for manufacturing structure for...

Active solid-state devices (e.g. – transistors – solid-state diode – With shielding

Reexamination Certificate

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C257SE23114, C257SE21231, C438S689000

Reexamination Certificate

active

07973392

ABSTRACT:
An electronic device including a shielded electronic element, and a method for manufacturing a shielding structure. An oxide film is formed on the surface of a silicon substrate having a [100] face. Part of the oxide film is removed to form a first window region. Silicon substrates are joined together to form an SOI substrate, which includes a buried mask having a second window region. Substrate thinning is then performed, and oxide films are formed on the two surfaces of the SOI substrate so that the first window region has a large area and includes the region above the buried second window region. Then, anisotropic etching is performed to form a cap that includes a step. Wire bonding for shielding is performed on the step.

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patent: 6514789 (2003-02-01), Denton et al.
patent: 6777767 (2004-08-01), Badehi
patent: 6853055 (2005-02-01), Kuang
patent: 7265440 (2007-09-01), Zilber et al.
patent: 2002/0086456 (2002-07-01), Cunningham et al.
patent: 2004/0102021 (2004-05-01), Sawyer et al.
patent: 2008/0185692 (2008-08-01), Salzman
patent: 2004063089 (2004-07-01), None

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