Active solid-state devices (e.g. – transistors – solid-state diode – With shielding
Reexamination Certificate
2011-07-05
2011-07-05
Malsawma, Lex (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
With shielding
C257SE23114, C257SE21231, C438S689000
Reexamination Certificate
active
07973392
ABSTRACT:
An electronic device including a shielded electronic element, and a method for manufacturing a shielding structure. An oxide film is formed on the surface of a silicon substrate having a [100] face. Part of the oxide film is removed to form a first window region. Silicon substrates are joined together to form an SOI substrate, which includes a buried mask having a second window region. Substrate thinning is then performed, and oxide films are formed on the two surfaces of the SOI substrate so that the first window region has a large area and includes the region above the buried second window region. Then, anisotropic etching is performed to form a cap that includes a step. Wire bonding for shielding is performed on the step.
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Bergere Charles
Freescale Semiconductor Inc.
Malsawma Lex
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