Electronic device

Details Electronic device Electronic device

2011-05-24

2011-05-24

Wilson, Allan R (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Responsive to non-optical, non-electrical signal

C257S428000, C257SE31113, C716S119000

Reexamination Certificate

active

07948014

ABSTRACT:
The invention relates to an electronic device having a semiconductor die comprising at least one RF-transistor (RFT) occupying a total RF-transistor active area (ARFT) on the die (DS). The total RF-transistor active area (ARFT) includes at least one transistor channel (C) having a channel width (W) and a channel length (L), and at least one bias cell (BC) for biasing the RF-transistor (RFT). The total bias cell active area (ABC) includes at least one transistor channel (C) having a channel width (W) and a channel length (L). The at least one bias cell (BC) occupies a total bias cell active area (ABC) on the die (SD). The total RF-transistor active area (ARFT) is substantially greater than the total bias cell active area (ABC). The total bias cell active area (ABC) has a common centre of area (COABC). The total RF-transistor active area (ARFT) has a common centre of area (COARF). The active areas (ABC, ARFT) are arranged such that both, the common centre of area or sub-areas of the RF-transistor (COARF) and the common centre of area or sub-areas of the bias cell (COABC) are positioned on an axis (AX2). The axis (AX2) is substantially perpendicular or parallel to the length (L) of the at least one channel (C) of the RF-transistor (RFT).

REFERENCES:
patent: 5021853 (1991-06-01), Mistry
patent: 5623232 (1997-04-01), Halbert et al.
patent: 6018270 (2000-01-01), Stuebing et al.
patent: 6285865 (2001-09-01), Vorenkamp et al.
patent: 6426680 (2002-07-01), Duncan et al.
patent: 6448859 (2002-09-01), Morizuka
patent: 6661290 (2003-12-01), Sugiura
patent: 7046090 (2006-05-01), Veinblat
patent: 7665054 (2010-02-01), Gopalakrishnan et al.
patent: 2002/0097097 (2002-07-01), Sugiura
patent: 2004/0222848 (2004-11-01), Shih et al.
patent: 2006/0090146 (2006-04-01), LeBritton et al.
patent: 2009/0273009 (2009-11-01), Cummins
patent: 2010/0031215 (2010-02-01), Ramsour et al.
patent: 2213320 (1989-08-01), None
Su, J.-G; et al “New Insights on RF CMOS Stability Related to Bias, Scaling, and Temperature” Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (CAT. No. 00TH8503) IEEE Piscataway, NJ, USA, 2000, pp. 40-43.

Affiliated with

Also associated with

Rating

Electronic device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electronic device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electronic device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2630838