Electronic device

Details Electronic device Electronic device

1996-09-19

1997-09-23

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 17, 257 20, 257 23, 257 24, 257 30, H01L 2906, H01L 310328, H01L 310336, H01L 31072

Patent

active

056707908

ABSTRACT:
An electronic device which includes, a couple of first conduction regions which are capable of confining carriers, a second conduction region having a higher energy level than those of the first conduction regions, and a first electrode for impressing a voltage on the first conduction regions, wherein when a voltage is impressed via the first electrode between the couple of first conduction regions, carriers are caused to move due to a tunneling effect from one of the first conduction regions via the second conduction region to the other of the first conduction regions, and when the voltage impressed between the couple of first conduction regions is removed, carriers are confined mainly in the one of the first conduction regions.

REFERENCES:
Sandip Tiwari, et al., "Volatile And Non-Volatile Memories In Silicon With Nano-Crystal Storage", IEDM Technical Digest, 1995, pp. 95-521 to 95-524.

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