Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-04-03
2007-04-03
Potter, Roy Karl (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S779000
Reexamination Certificate
active
10970527
ABSTRACT:
An electronic device has at least one semiconductor chip, which has mutually opposing contact sides, of which one first contact side is electroconductively surface-bonded via a first, solid soldering-agent layer to at least one first metallic conductor part. The semiconductor chip is electroconductively surface-bonded on its second contact side facing opposite the first contact side via a second soldering-agent layer to at least one second metallic conductor part. The softening temperature of the second soldering-agent layer is adapted to an operating temperature that occurs in this soldering-agent layer during operation of the device in such a way that the second soldering-agent layer is doughy or liquid at the operating temperature. The second soldering-agent layer is laterally bounded by a flow-off protection device.
REFERENCES:
patent: 2530552 (1950-11-01), Stoddard, Jr.
patent: 5746367 (1998-05-01), Pai et al.
patent: 6822331 (2004-11-01), Eytcheson
Davidson Davidson & Kappel LLC
LuK Lamellen und Kupplungsbau Beteiligungs KG
Potter Roy Karl
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