Electronic device

Details Electronic device Electronic device

1998-07-17

2000-08-29

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Tunneling through region of reduced conductivity

257 34, 257 36, 257 39, 505193, H01L 2906, H01L 310256, H01L 3922

Patent

active

061112682

ABSTRACT:
The invention relates to an inverted JOFET with an at least bicrystalline electrically conductive substrate-layer bearing an insulating element and a superconductive element with a Josephson-junction. The substrate-layer is connected to a control-element. The invention further relates to a method for making such a JOFET. The grain boundary in the substrate-layer thereby maps into the Josephson-junction in the superconductive element.

REFERENCES:
patent: 5656575 (1997-08-01), Mueller
patent: 5831278 (1998-11-01), Berkowitz
patent: 5856205 (1999-01-01), Kugai
patent: 5981443 (1999-11-01), Wen

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