Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-07-16
1999-07-27
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257765, 257767, 257 59, H01L 2348, H01L 2352, H01L 2940
Patent
active
059295279
ABSTRACT:
An electronic device is provided using wiring comprising aluminum to prevent hillock or whisker from generating, wherein the wiring contains oxygen atoms at a concentration of 8.times.10.sup.18 atoms.multidot.cm.sup.-3 or less, carbon atoms at a concentration of 5.times.10.sup.18 atoms.multidot.cm.sup.-3 or less, and nitrogen atoms at a concentration of 7.times.10.sup.17 atoms.multidot.cm.sup.-3 or less; furthermore, a silicon nitride film is formed on the aluminum gate, and an anodic oxide film is formed on the side planes thereof.
Teramoto Satoshi
Yamazaki Shunpei
Fenty Jesse A.
Martin-Wallace Valencia
Semiconductor Energy Laboratory Co,. Ltd.
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