Electronic control variable phase shift device comprising a long

Details Electronic control variable phase shift device comprising a long Electronic control variable phase shift device comprising a long

1982-04-28

1984-05-22

Heyman, John S.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307304, 357 22, G01R 2500

Patent

active

044503725

ABSTRACT:
An electronic control device using a field effect transistor (f.e.t.) of a particular design and capable of causing in a h.f. circuit a phase shift appreciable at a frequency of the order of several Gc/s. To this effect, in a f.e.t. formed by an active layer of a thickness a deposited onto a semiconductor substrate of high resistivity, the gate of the f.e.t. is longer than the thickness a for instance the length of the gate measured along the path of the charge carriers in the conductive channel is of 10 microns, giving an appreciable phase shift at an operating frequency of 10 Gc/s.

REFERENCES:
patent: 3254231 (1966-05-01), Gandhi
patent: 3313952 (1967-04-01), Deming
patent: 3716730 (1973-02-01), Cerny
patent: 3727078 (1973-04-01), Wollesen
Electronics Letters, vol. 16, No. 14, Jul. 1980, C. Tsironis et al., "Dual Gate GaAs M.E.S.F.E.T., Phase Shifter with Gain at 12 GHz", pp. 553-554.

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