Electronic components with doped metal oxide dielectric material

Details Electronic components with doped metal oxide dielectric material Electronic components with doped metal oxide dielectric material

1998-03-12

1999-07-13

Barlow, John

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257410, 257411, H01L 2700, H01L 29227

Patent

active

059230568

ABSTRACT:
A doped, metal oxide dielectric material and electronic components made with this material are disclosed. The metal oxide is a Group III or Group VB metal oxide (e.g. Al.sub.2 O.sub.3, Y.sub.2 O.sub.3, Ta.sub.2 O.sub.5 or V.sub.2 O.sub.5) and the metal dopant is a Group IV material (Zr, Si, Ti, and Hf). The metal oxide contains about 0.1 weight percent to about 30 weight percent of the dopant. The doped, metal oxide dielectric of the present invention is used in a number of different electronic components and devices. For example, the doped, metal oxide dielectric is used as the gate dielectric for MOS devices. The doped, metal oxide dielectric is also used as the inter-poly dielectric material for flash memory devices.

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