Electronic component with a semiconductor composite structure

Details Electronic component with a semiconductor composite structure Electronic component with a semiconductor composite structure

1995-05-02

1997-08-12

Turner, Archene

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257 76, 428408, 428704, 428446, 428698, 428457, H01L 2916

Patent

active

056568282

ABSTRACT:
The invention relates to a semiconductor composite structure for an electronic component. The semiconductor composite structure comprises a diamond layer, which is substantially undoped except for unavoidable impurities, one side of which is covered by a doped diamond-free semiconductor layer, with the layers being arranged on a growth substrate. The discontinuity which exists at the transition between the semiconductor layer and the diamond layer with respect to the conduction band and/or the valence band, is such that in the semiconductor layer charge carriers, which are excited optically and/or thermally, can be conducted in the valence band and/or conduction band of the undoped diamond layer with a decrease in their potential energy.

REFERENCES:
patent: 4707384 (1987-11-01), Schachner et al.
patent: 5082522 (1992-01-01), Purdes et al.
Popov, "Electron Cyclotron Resonance Plasmas Excited by Rectangular and Circular Microwave Modes", J. Vac. Sci. Technol. A., 8(3), May/Jun. 1990.
Peter, G., A. Koller and S. Vazquez, "A New Electron Beam Evaporation Source for Si Molecular Beam Epitaxy Controlled by a Quadrupole Mass Spectrometer", J. Vac. Sci. Technol. A., 9(8), Nov./Dec. 1991.

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