Electronic component using a silicon carbide substrate and a met

Details Electronic component using a silicon carbide substrate and a met Electronic component using a silicon carbide substrate and a met

1985-12-23

1987-04-14

Rutledge, L. Dewayne

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

428641, 428660, 428661, 428663, 428671, 428672, 428673, 428670, 4272557, 4273833, 427404, B32B 1504

Patent

active

046578250

ABSTRACT:
The bond strength between a silicon carbide substrate and a metal layer comprised of a series of metal films is improved without detrimentally affecting other properties of such a device by interposing a layer of silicon, Si.sub.2 Mo or mixtures thereof between the substrate and the first metal film in the layer which is preferably Ti, Zr or Hf.

REFERENCES:
patent: 4025947 (1977-05-01), Gernitis et al.
patent: 4293619 (1981-10-01), Landingham et al.
patent: 4532190 (1985-07-01), Kambe et al.
patent: 4567110 (1986-01-01), Jarvinen

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