Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With means to increase current gain or operating frequency
Reexamination Certificate
2005-06-07
2005-06-07
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With means to increase current gain or operating frequency
C257S787000, C257S790000, C257S659000
Reexamination Certificate
active
06903440
ABSTRACT:
In order to provide an electronic component of a high frequency current suppression type, which can completely suppress a high frequency current to prevent an electromagnetic interference from occurring even when it is used at a high frequency, and a bonding wire for the same, the semiconductor integrated circuit device (IC) (17) operates at a high speed in using at a high frequency band, and a predetermined number of terminals (19) are provided with a high frequency current suppressor (21) for attenuating a high frequency current passing through the terminals themselves. This high frequency current suppressor (21) is a thin film magnetic substance having a range from 0.3 to 20 (μm) in thickness, and is disposed on the entire surface of each terminal (19), covering a mounting portion to be mounted on a printed wiring circuit board (23) for mounting IC (17) and an edge including a connecting portion to a conductive pattern (25) disposed on the printed wiring circuit board (23). When the top end is connected with the conductive pattern (25) by means of a solder (27) in mounting the printed wiring circuit board (23) of IC (17), the vicinity of the mounting portion has conductivity in a using frequency band, which is less than a few tens MHz.
REFERENCES:
patent: 6495927 (2002-12-01), Yoshida et al.
patent: 6635819 (2003-10-01), Awakura et al.
Kamei Koji
Ono Hiroshi
Yoshida Shigeyoshi
Nec Tokin Corp.
Nguyen Cuong
Ruben Bradley N.
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