Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Reexamination Certificate
2001-04-04
2003-10-21
Nguyen, Cuong Quang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
C257S734000
Reexamination Certificate
active
06635961
ABSTRACT:
BACKGROUND OF THE INVENTION
(1) Field of the Invention
The present invention relates to an electronic component for circuit board mounting, which has a predetermined number of terminals mainly represented by a semiconductor active device, such as a semiconductor integrated circuit device (IC), a semiconductor large-scale integrated circuit device (LSI), and a logic circuit device of a high-speed operation type, more particularly, an electronic component of a high frequency current suppression type, comprising a function for attenuating a high frequency current passing through the terminal when the electronic component is used.
The invention also relates to a bonding wire mainly provided for connection between predetermined places of an electric/electronic equipment, more particularly, a bonding wire of a high frequency current suppression type for an electronic component having a function for attenuating a high frequency current passing through the bonding wire itself from an electronic component such as a semiconductor active device used at a high frequency in a bandwidth from a few tens MHz to a few GHz for the purpose of performing a high-speed operation.
(2) Description of the Related Art
Recently, various types of semiconductor active devices, which include a semiconductor storing apparatus represented by a random access memory (RAM) and a read only memory (ROM), for example, or a logic circuit device represented by a microprocessor (MPU), a central processing unit (CPU), an image processor arithmetic logic unit (IPALU) and such is used as an electronic component to be mounted on a printed wiring circuit board, which is mounted on an electronic equipment and/or an information processing apparatus in an electronic information communication field, and which is provided with a conductive pattern.
These semiconductor active devices are provided with a predetermined number of terminals (usually, referred to as a lead frame), which generally are largely integrated in accordance with a circuit layout for the purpose of performing a high-speed operation in using at a high frequency upon manufacturing a product so as to be provided for processing a signal, and are arranged as a chip for a semiconductor integrated circuit device (IC) or a semiconductor large-scale integrated circuit device (LSI).
On the other hand, in relation to such semiconductor active devices, a calculation speed and a signal processing speed are rapidly made higher, and the semiconductor active devices are used at a high frequency in a bandwidth from a few tens MHz to a few GHz under a standard so as to be further highly integrated to perform a high-speed operation.
When the electronic component represented by the semiconductor active devices described above is used at a high frequency in a bandwidth from a few tens MHz to a few GHz for the purpose of performing a high-speed operation, an electric signal passing through a terminal would be a high frequency (high harmonic) current, so that the high frequency current may sometimes transmit between components, between signal paths including terminals, or between equipments/apparatuses on which the electronic component is mounted. Such high frequency current would give a bad influence on an operation process in a component (circuit device) to perform an error operation or would deteriorate a basic function, which are a cause of an electromagnetic interference, and therefore, should be deleted. In the current situation, however, a countermeasure against the high frequency current is not enough taken into account for the electronic component. This leads to a problem that the electromagnetic interference caused by the high frequency current cannot be prevented from occurring.
In the above-mentioned semiconductor chip, a bonding wire connects the predetermined number of terminals and a main body.
In relation to a semiconductor active device, to which connection by a bonding wire for an electronic component is applied, a calculation speed and a signal processing speed are rapidly made higher, and the semiconductor active device is used at a high frequency in a bandwidth from a few tens MHz to a few GHz under a standard so as to be further highly integrated to perform a high-speed operation.
In the case of a bonding wire for an electronic component, however, when the element component is used at a high frequency in a bandwidth from a few tens MHz to a few GHz for the purpose of performing a high-speed operation on the semiconductor active element side, a high frequency (high harmonic) current would pass through a terminal and a wire, so that the high frequency current may transmit between components, between signal paths including terminals, or between equipments/apparatuses on which the electronic component is mounted. Such high frequency current would give a bad influence on an operation process in a component or a circuit device to perform an error operation or would deteriorate a basic function, which are a cause of an electromagnetic interference, and therefore, should be deleted. In the current situation, however, a countermeasure against the high frequency current is not enough taken into account for the electronic component and the bonding wire. This leads to a problem that the electromagnetic interference cannot be prevented from occurring which is caused by the high frequency current.
SUMMARY OF THE INVENTION
It is an object of the invention to provide an electronic component of a high frequency current suppression type, which completely suppresses a high frequency current even when it is used at a high frequency in a bandwidth from a few tens MHz to a few GHz so as to prevent an electromagnetic interference from occurring.
It is another object of the invention to provide a bonding wire of a high frequency current suppression type for an electronic component, which completely suppresses a high frequency current even when it is used at a high frequency in a bandwidth from a few tens MHz to a few GHz so as to prevent an electromagnetic interference from occurring.
According to an aspect of the invention, there is provided an electronic component of a high frequency current suppression type, which comprises a predetermined number of terminals provided for processing a signal. In the electronic component, a part or all of the predetermined number of terminals are provided with a high frequency current suppressor for attenuating a high frequency current passing through the terminals themselves in a bandwidth from a few tens MHz to a few GHz.
It is preferable that, in this electronic component of a high frequency current suppression type, the high frequency current suppressor is disposed on a part or all of the surface of the predetermined terminals at a place other than a mounting portion to be mounted on a circuit board for mounting at least an electronic component and an edge including a connecting portion to a conductive pattern disposed on the circuit board, and that the high frequency current suppressor also has conductivity in a using frequency bandwidth less than a few tens MHz near the mounting portion to be mounted on a circuit board for mounting at least an electronic component.
It is preferable that, in one of the above electronic components of a high frequency current suppression type in an embodiment according to the invention, the high frequency current suppressor is an electronic component of a high frequency current suppression type, which is formed to be a film on a part or all of a surface of the predetermined number of terminals by a sputtering method, or the high frequency current suppressor is formed to be a film on a part or all of a surface of the predetermined number of terminals by a vapor deposition method.
It is also preferable respectively that, in one of the above electronic components of a high frequency current suppression type in an embodiment according to the invention, the high frequency current suppressor comprises a film formed on a part or all of a metallic parent material board used in advance in a manufacturing process of the
Kamei Koji
Ono Hiroshi
Yoshida Shigeyoshi
NEC Tokin Corp.
Nguyen Cuong Quang
Ruben, PC Bradley N
LandOfFree
Electronic component of a high frequency current suppression... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electronic component of a high frequency current suppression..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electronic component of a high frequency current suppression... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3113769