Semiconductor device manufacturing: process – Making passive device – Trench capacitor
Reexamination Certificate
2011-02-01
2011-02-01
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making passive device
Trench capacitor
C438S221000, C438S242000, C438S266000, C438S393000, C438S396000, C257SE21585
Reexamination Certificate
active
07879679
ABSTRACT:
A method for manufacturing an electronic component on a semiconductor substrate, including forming at least one opening in the substrate; forming in the bottom and on the walls of the opening and on the substrate an alternated succession of layers of a first material and of a second material, the second material being selectively etchable with respect to the first material and the substrate; trimming the layer portions of the first material and of the second material which are not located in the opening; selectively etching a portion of the first material to obtain trenches; and filling the trenches with at least one third material.
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Bensahel Daniel
Campidelli Yves
Kermarrec Oliver
Jorgenson Lisa K.
Lee Kyoung
Morris James H.
Richards N Drew
STMicroelectronics (Crolles 2) SAS
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