Electronic component having improved low resistance contact and

Details Electronic component having improved low resistance contact and Electronic component having improved low resistance contact and

1990-02-21

1991-06-11

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

29 2542, 357 42, 357 51, H01G 406, H01G 700, H01L 2702

Patent

active

050237500

ABSTRACT:
A capacitor includes a lower electrode formed from a layer of silicon or polycrystalline silicon, a single or multi-layer dielectric film such as a nitride film, and an upper electrode formed on the dielectric film. The dielectric film is formed, after a surface layer of the lower electrode has been removed by etching, on a new surface of the lower electrode continuously in a non-oxidizing atmosphere. By this process, formation of an incidental oxide film between the dielectric film and the lower electrode can be prevented.
In a direct contact region of the conductive layer, the surface of the contact region is also etched by dry chemical etching, and thereafter the conductive layer is formed in an oxygen-free atmosphere. By doing so, generation of an incidental oxide film having high resistance can be prevented, whereby the contact characteristic can be improved.

REFERENCES:
patent: 4233109 (1980-11-01), Nishizawa
patent: 4741800 (1988-05-01), Yamazaki
patent: 4811076 (1989-03-01), Tigelaar et al.
patent: 4859623 (1989-08-01), Busta
patent: 4862231 (1989-08-01), Abend
patent: 4914546 (1990-04-01), Alter
patent: 4937645 (1990-06-01), Ootsuka et al.
Y. Ohji et al., "Reliability of Nano-Meter Thick Multi-Layer Dielectric Films on Poly-Crystalline Silicon", IEEE/IRPS (1987), pp. 55-59.
Y. Ohno et al., "Reliability of Trench Capacitors with SiO.sub.2 /Si.sub.3 N.sub.4 Double-Layer Films for High Density DRAM's", pp. 35-36.

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