Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2003-07-09
2011-10-25
Such, Matthew W (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S741000, C257SE21589, C257SE23152, C257SE23165, C438S597000, C438S665000, C438S666000
Reexamination Certificate
active
08044517
ABSTRACT:
An electronic component comprises a plurality of layers at least two of which comprise predominantly organic functional materials with improved through-plating through certain of the layers. The through-plating is formed in one embodiment by a disruption element on a first lower layer which results in a void in the subsequently applied layers, which void is filled with a material which may be conductive to form the through plating. In a second embodiment, the through plating is formed on the first lower layer prior to the subsequent application of the other layers, in the form of a free-standing truncated frusto-conical raised portion, and forms a disruption or non-welting element for the subsequently applied other layers, formed on the first lower layer and which are engaged with and surround the through plating after their application.
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Bernds Adolf
Clemens Wolfgang
Knobloch Alexander Friedrich
Carella Byrne et al.
Olstein Elliott M.
PolyIC GmbH & Co. KG
Squire William
Such Matthew W
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