Electronic component comprising a titanium carbonitride...

Details Electronic component comprising a titanium carbonitride... Electronic component comprising a titanium carbonitride...

2008-04-30

2010-12-14

Luu, Chuong A (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S764000, C257SE21292

Reexamination Certificate

active

07851915

ABSTRACT:
An electronic component comprising several superimposed layers of materials including a TiCN barrier layer. A process for depositing a TiCN layer in order to obtain an electronic component, where a titanium precursor is chosen from among tetrakis(dimethylamido)titanium and/or tetrakis(diethylamido)titanium and is decomposed on a substrate by plasma-enhanced atomic layer deposition (PEALD) where the plasma is obtained with a hydrogen-rich gas which can contain nitrogen with at most 5 atomic % nitrogen and at least 95 atomic % hydrogen.

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Eizenberg et al., “Chemical Vapor Deposited TiCN: A New Barrier Metallization for Submicron Via and Contact Applications”, J. Vac. Sci. Technol. A 13(3):590-595, May/Jun. 1995.

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