Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-12-01
2010-12-28
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S532000, C257S533000, C257S535000, C257S528000, C257S508000, C257S275000, C257S277000, C257S307000, C257SE21022, C257SE29343, C257SE23144, C361S311000, C361S821000, C336S200000, C438S239000
Reexamination Certificate
active
07859080
ABSTRACT:
The invention provides an electronic component which has an improved breakdown limit value of withstand voltage and improved insulation properties and which can be made compact and provided with a multiplicity of layers and a great capacity. The electronic component includes a first conductor having a bottom conductor formed on a substrate and a raised conductor formed to protrude from the bottom conductor, a dielectric film formed on the raised conductor, and a second conductor formed on the dielectric film to constitute a capacitor element in combination with the raised conductor and the dielectric film.
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Siliconfareast.com document for conventional dielectric rates.
Furuya Akira
Kuwajima Hajime
Miyazaki Masahiro
Shibata Makoto
Chen David Z
Oliff & Berridg,e PLC
TDK Corporation
Warren Matthew E
LandOfFree
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