Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2008-03-18
2008-03-18
Thai, Luan (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S678000, C257S660000, C257S099000, C257S704000, C257S701000
Reexamination Certificate
active
10932893
ABSTRACT:
An electronic component, in which a chip can be mounted on a certain predetermined place of the package at a high accuracy level, which package having a stepped level-difference in the inner wall of a cavity. The package is provided with a stepped level-difference in the inner wall surface, and an internal contact electrode formed on the upper surface of the stepped level-difference. At the bottom of the package is a shield electrode, on which a chip is mounted via an adhesion layer. The chip and the internal contact electrode are electrically connected by an interconnection wire. Location aligning for the chip and the interconnection wire, at least either one of these, is conducted by making use of a region, which is non-electrode portion, provided on the inner bottom surface of the package.
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Fujii Kunihiro
Matsuo Satoshi
Murakami Kozo
RatnerPrestia
Thai Luan
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